MITSUBISHI <INTELLIGENT POWER MODULES>
PM150RSE120
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2001
MITSUBISHI <INTELLIGENT POWER MODULES>
PM150RSE120
FLAT-BASE TYPE
INSULATED PACKAGE
PM150RSE120
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1
µm fine rule process.
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
• 3
φ 150A, 1200V Current-sense IGBT for 15kHz switching
• 50A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 30kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
16.5
135
24.1
5
10.6
11.6
MOUNTING
HOLES
39.7
3.22
10.16
10.16
10.16
2-2.54 2-2.54
3.22
2-2.54
2-2.54
6-2.54
67.4
74.4
11
20
20
39.5
±1
1 2 3
4 5 6
7 8 9
10
11
12
13
14
15
16
95.5
±
0.5
110
±
1
120.5
LABEL
4-
φ5.5
φ2.54
Screwing depth
Min9.0
2-
φ2.54
16- 0.64
±0.5
51.5
A
26
10.5
13
4
26
21.3
33.7
34.7
4-R6
6-M5 NUTS
0.5
±0.3
24.1
–
0.5
+1.0
U
P
N
B
PPS
V
W
0.64
A : DETAIL
Terminal code
1. V
UPC
2. U
P
3. V
UP1
4. V
VPC
5. V
P
6. V
VP1
7. V
WPC
8. W
P
9. V
WP1
10. V
NC
11. V
N1
12. B
r
13. U
N
14. V
N
15. W
N
16. F
O