MITSUBISHI <INTELLIGENT POWER MODULES>
PM150RSE120
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2001
TOTAL SYSTEM
3.2
2.8
3.5
2.5
0.3
1.0
3.5
1.2
1
10
Min.
Typ.
Max.
Collector-Emitter
Saturation Voltage
Collector-Emitter
Cutoff Current
–I
C
= 150A, V
D
= 15V, V
CIN
= 15V
(Fig. 2)
T
j
= 25
°C
T
j
= 125
°C
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Test Condition
V
CE(sat)
I
CES
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
Limits
—
—
—
0.5
—
—
—
—
—
—
2.4
2.1
2.5
1.0
0.15
0.4
2.5
0.7
—
—
T
j
= 25
°C
T
j
= 125
°C
FWDi Forward Voltage
Switching Time
V
D
= 15V, V
CIN
= 15V
↔0V
V
CC
= 600V, I
C
= 150A
T
j
= 125
°C
Inductive Load (upper and lower arm)
(Fig. 3)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 4)
V
D
= 15V, I
C
= 150A
V
CIN
= 0V, Pulsed
(Fig. 1)
V
mA
V
µs
Unit
Tc
63mm
U
PN
B
V
W
Parameter
Symbol
Supply Voltage Protected by
OC & SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Condition
V
CC(surge)
T
C
T
stg
V
iso
Ratings
V
CC(PROT)
800
1000
–20 ~ +100
–40 ~ +125
2500
Unit
V
°C
°C
V
rms
V
V
D
= 13.5 ~ 16.5V, Inverter Part,
T
j
= 125
°C Start
Applied between : P-N, Surge value or without switching
(Note-1)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
(Note-1) T
C
measurement point is as shown below. (Base plate depth 3mm)
0.16
0.24
0.30
0.80
0.10
0.16
0.22
0.36
0.018
°C/W
R
th(j-c)Q
R
th(j-c)F
R
th(j-c)Q
R
th(j-c)F
R
th(j-c’)Q
R
th(j-c’)F
R
th(j-c’)Q
R
th(j-c’)F
R
th(c-f)
Inverter IGBT part (per 1 element), (Note-1)
Inverter FWDi part (per 1 element), (Note-1)
Brake IGBT part (Note-1)
Brake FWDi part (Note-1)
Inverter IGBT part (per 1 element), (Note-2)
Inverter FWDi part (per 1 element), (Note-2)
Brake IGBT part (Note-2)
Brake FWDi part (Note-2)
Case to fin, Thermal grease applied (per 1 module)
Symbol
Parameter
Test Condition
Unit
Limits
Min.
Typ.
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
(Note-2) T
C
measurement point is just under the chips.
If you use this value, R
th(f-a)
should be measured just under the chips.